Band evolution of two-dimensional transition metal dichalcogenides under electric fields
Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides
Strong and tunable interlayer coupling of infrared-active phonons to excitons in van der Waals heterostructures
In current flash memory, there is an inevitable tradeoff between the operation voltage and the retention time due to the incorporation of very thin tunneling layer in the device structure. In this work, a new type of robust floating gate nonvolatile memory based on 2D materials is introduced to reduce the operation voltage and promote the data retention time.
Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures.
二维材料团队
