搜索 EN
2019

科研成果2019

当前位置:首页 > 科研成果 > 2019 >

New Floating Gate Memory with Excellent Retention Characteristics

发布时间:2021-05-28 发表期刊和卷宗:Advanced Electronic Materials 1800726 (2019) 论文链接
作者:Shuopei Wang, Congli He, Jian Tang, Xiaobo Lu, Cheng Shen, Hua Yu, Luojun Du, Jiafang Li, Rong Yang, Dongxia Shi and Guangyu Zhang.

标签

上一篇:Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

下一篇:Atomic Layer Deposition of Al₂O₃ Directly on 2D Materials for High‐Performance Electronics

返回

Copyright ©2021 松山湖材料实验室 粤ICP备18107825号 广东省东莞市大朗镇屏东路333号 邮箱: