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  • Exchange bias and spin–orbit torque in the Fe₃GeTe₂-based heterostructures prepared by vacuum exfoliation approach
  • Correlated states in twisted double bilayer graphene
  • Wafer-Scale Highly Oriented Monolayer MoS₂ with Large Domain Sizes
  • Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
  • Precise control of the interlayer twist angle in large scale MoS₂ homostructures
  • Enhancing and controlling valley magnetic response in MoS₂/WS₂ heterostructures by all-optical route
  • Scratching lithography for wafer-scale MoS₂ monolayers
  • Two-dimensional (2D) material is a new type of materials with thickness ranging from one to several atoms. Atoms within each individual layers are bonded by rather strong covalent bonds while the adjacent layers are usually stacked together by weak van der Waals (vdW) force.

    Important factors supporting the vigorous developments of 2D materials are their unique physical properties (associated with interfaces) and potential applications. High-quality 2D crystals play a significant role in exploring new physical phenomena and in further extending their applications in microelectronics and optoelectronics.

    Ranging from the initial micro/nano electronic/optoelectronic devices to spin/valley electronic devices, and ranging from optical/electrocatalyst to lithium battery and solar cell and to other areas, 2D materials are expected to be widely used in the new generation of electronic information and energy storage fields.

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  • The emergence of 2D materials opens a brand-new space for exploring various functional material systems and pave the way to overcome various restrictions on the performance of traditional semiconductor devices. Preparation of high quality, wafer-scale monolayer membrane on insulating substrates is crucial for the application of 2D materials in large-scale integrated electronic and optoelectronic devices.

    The uniformity of 2D crystals and the unity of their orientations determine the performance of electronic devices so that are decisive in the realization of massive applications of electronic devices based on 2D materials. Moreover, 2D materials can also be used to construct 2D vdW heterostructures in which the interface constructed by vdW force plays a key role in designing and modifying the physical properties and in realizing the application of relevant devices. The combination of the characteristics of two or even more 2D materials in a vdW heterostructure vastly enriches the properties of 2D materials and makes it straightforward to create artificial materials with designed properties.

    In recent years, formation of Moire superlattice in the two-dimensional materials by controlling the stacking order between layers has been developed as a new dimension to reshape the physical properties of 2D materials. Controlling the formation of Moire superlattice managed to obtain a variety of exotic states in the twisted graphene system and is developing into another key field of the condensed matter physics and materials science. Promoting the research on the Moire superlattice systems represented by the twisted graphene is of great significance to promote the development of microelectronics and information technologies in our country.

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  • Team News

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  • 团队博士后李娜成功入选2021年度博士后创新人才支持计划

    Congratulations to Xingchao Zhang, He won CY23 postdoctoral innovative talent support program

    2023-10-20From China Postdoctoral Science

    Congratulations to Xingchao Zhang, He won CY23 postdoctoral innovative talent support program

  • The work of low-power flexible integrated circuits based on monolayer MoS2 was reported by the voice of Chinese Academy of Sciences

    The work of low-power flexible integrated circuits based on monolayer MoS2 was reported by the voice of Chinese Academy of Sciences

    2023-07-05From The voice of Chinese Academy of Sciences

    This work shows flexible integrated circuits based on monolayer MoS2 can have both high performance and low power consumption, which provides a technical foundation for the development of two-dimensional semiconductor-based integrated circuits to practical applications

  • The work of large area flexible multifunctional optoelectronic devices based on MoS2 was reported by Nano Research

    The work of large area flexible multifunctional optoelectronic devices based on MoS2 was reported by Nano Research

    2023-04-11From Nano Research

    Team developed a large-area flexible multifunctional optoelectronic device based on large-area, high-quality, monolayer MoS2. The optical decay time and persistent photoconductance of the device can be effectively controlled by the gate voltage, so that the functions of optical detection, optical storage and photoelectric synapse can be realized.

  • The work on the flexible light-sensitive ring oscillator of artificial retina was reported by Kejiangculture

    The work on the flexible light-sensitive ring oscillator of artificial retina was reported by Kejiangculture

    2023-02-03From Kejiangculture

    The flexible artificial retina device reported in this work has simple device structure, high photoelectric conversion efficiency, ultra-low power consumption and strong adjustability, which provides a new design and idea for the development of artificial retina, and has a great application prospect in the future clinical treatment

  • Cooperation

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  • Institute of Physics, Chinese Academy of Sciences

    Institute of Physics, Chinese Academy of Sciences

  • Chinese Academy of Sciences University

    Chinese Academy of Sciences University

  • Hong Kong University of Science and Technology

    Hong Kong University of Science and Technology

  • Hong Kong Polytechnic University

    Hong Kong Polytechnic University

  • Shanghai University of Science and Technology

    Shanghai University of Science and Technology

  • Hong Kong university

    Hong Kong university

  • Hunan University

    Hunan University

  • Southern University of Science and Technology

    Southern University of Science and Technology

  • South China Normal University

    South China Normal University

  • Northeast Normal University

    Northeast Normal University

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