Two-dimensional (2D) metals are appealing for many emergent phenomena and have recently attracted research interests1–9. Unlike the widely studied 2D van der Waals (vdW) layered materials, 2D metals are extremely challenging to achieve, because they are thermodynamically unstable1,10. Here we develop a vdW squeezing method to realize diverse 2D metals (including Bi, Ga, In, Sn and Pb) at the ångström thickness limit. The achieved 2D metals are stabilized from a complete encapsulation between two MoS2 monolayers and present non-bonded interfaces, enabling access to their intrinsic properties. Transport and Raman measurements on monolayer Bi show excellent physical properties, for example, new phonon mode, enhanced electrical conductivity, notable field effect and large nonlinear Hall conductivity. Our work establishes an effective route for implementing 2D metals, alloys and other 2D non-vdW materials, potentially outlining a bright vision for a broad portfolio of emerging quantum, electronic and photonic devices.
Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS2). By co-optimization of the fabrication processes, flexible MoS2 TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS2 TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics.
Large-scale, high-quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and is demonstrated at a wafer scale up to 4-in. In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-in. wafer-scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V−1 s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry-scale applications.
Magnetic two-dimensional (2D) van der Waals (vdWs) materials are receiving increased attention due to their exceptional properties and potential applications in spintronic devices. Because exchange bias and spin–orbit torque (SOT)-driven magnetization switching are basic ingredients for spintronic devices, it is of pivotal importance to demonstrate these effects in the 2D vdWs material-based magnetic heterostructures. In this work, we employ a vacuum exfoliation approach to fabricate Fe₃GeTe₂ (FGT)/Ir₂₂Mn₇₈ (IrMn) and FGT/Pt bilayers, which have high-quality interfaces. An out-of-plane exchange bias of up to 895 Oe is obtained in the former bilayer, which is larger than that of the previously studied bilayers. In the latter bilayer, the SOT switching of the perpendicularly magnetized FGT is realized, which exhibits higher SOT-driven switching performance compared to the previously studied FGT/Pt bilayer devices with interfacial oxidation.
Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by the ‘magic angle’, flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band structure of untwisted bilayer graphene can be further tuned by a displacement field, providing an extra degree of freedom to control the flat band that should appear when two bilayers are stacked on top of each other. Here, we report the discovery and characterization of displacement field-tunable electronic phases in twisted double bilayer graphene. We observe insulating states at a half-filled conduction band in an intermediate range of displacement fields.
Two-dimensional molybdenum disulfide (MoS₂) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS₂ wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS₂ wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS₂.
Atomically thin molybdenum disulfide (MoS₂) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS₂-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS₂-based transistors and logic circuits on flexible substrates using four-inch wafer-scale MoS₂ monolayers. Our approach uses a modified chemical vapour deposition process to grow wafer-scale monolayers with large grain sizes and gold/titanium/ gold electrodes to create a contact resistance as low as 2.9 kΩ μm−1. The field-effect transistors are fabricated with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35 μA μm−1), mobilities (~55 cm2 V−1 s−1) and flexibility.
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS₂ homostructures via the combination of wafer-scale highly-oriented monolayer MoS₂ growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS₂ homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS₂ homostructures, where 30° twist angle yields higher electron mobility.
Van der Waals heterostructures of transition metal dichalcogenides with interlayer coupling offer an exotic platform to realize fascinating phenomena. Due to the type II band alignment of these heterostructures, electrons and holes are separated into different layers. The localized electrons induced doping in one layer, in principle, would lift the Fermi level to cross the spin-polarized upper conduction band and lead to strong manipulation of valley magnetic response. Here, we report the significantly enhanced valley Zeeman splitting and magnetic tuning of polarization for the direct optical transition of MoS₂ in MoS₂/WS₂ heterostructures. Such strong enhancement of valley magnetic response in MoS₂ stems from the change of the spin-valley degeneracy from 2 to 4 and strong many-body Coulomb interactions induced by ultrafast charge transfer. Moreover, the magnetic splitting can be tuned monotonically by laser power, providing an effective all-optical route towards engineering and
Monolayer MoS₂ is an emerging two-dimensional (2D) semiconductor with promise on novel electronics and optoelectronics. Standard micro-fabrication techniques such as lithography and etching are usually involved to pattern such materials for devices but usually face great challenges on yielding clean structures without edge, surface and interface contaminations induced during the fabrication process. Here a direct writing patterning approach for wafer-scale MoS₂ monolayers is reported. By controllable scratching by a tip, wafer-scale monolayer MoS₂ films on various substrates are patterned in an ultra-clean manner. MoS₂ field effect transistors fabricated from this scratching lithography show excellent performances, evidenced from a room-temperature on-off ratio exceeding 1010 and a high field-effect mobility of 50.7 cm2 V−1 s−1, due to the cleanness of as-fabricated devices. Such scratching approach can be also applied to other 2D materials, thus providing an alternate patte
二维材料是一种具有单个或几个原子层厚度的新型晶体材料，其二维层内的原子之间存在着牢固的共价键，而层与层之间通常通过较弱的范德华力堆叠在一起。
支持二维材料蓬勃发展的重要因素是材料本身及其维度，与界面相关的独特物理特性和广阔的应用前景。高质量的二维原子晶体材料在探索新的物理现象以及进一步扩展其在微电子和光电子领域的应用方面发挥着重要作用。
从最初的微/纳米电子器件和光电器件，到自旋电子器件和谷极化器件，再到后来的光/电催化剂，锂电池，太阳能电池等，预计二维材料将被广泛用于新一代电子信息和能源存储领域。
二维材料的出现，为探索各种功能材料体系打开了新的广阔空间，为突破传统半导体器件在性能上的各种限制提供了重要的新途径。在绝缘衬底上制备高质量、晶圆级大面积单层薄膜对实现二维材料在大规模集成半导体电子器件和光电器件领域的应用尤为关键。其中材料的均匀度与晶体取向的单一性对于半导体器件的性能优化至关重要，进而决定器件大规模应用实现。
此外，二维材料还可以用于构筑二维范德华异质结。在这种结构中，范德华力构筑的界面在设计和调控材料的物理特性，实现相关器件的应用中起着关键作用。二维范德华异质结结合了两种或多种二维材料的特点，极大地丰富了二维材料的特性，并且可以轻松生产出自然界中不存在但可以针对性能进行设计的人造材料。近年来，采用转角层间堆垛的方法，在二维材料中形成稳定的摩尔超晶格，成为了调控二维材料物性的崭新维度。
该方法成功地在转角石墨烯中实现了多种奇异物态，并成为当代凝聚态物理和材料科学发展的又一关键领域。大力推动对以转角石墨烯为代表的摩尔超晶格体系的研究，对推动我国微电子和信息技术的发展具有重要意义。
2025年11月24日，新基石科学基金会正式揭晓第三期“新基石研究员”获资助名单，35位科学家上榜。
A direct bonding–debonding method has been developed to fabricate stacked two-dimensional semiconductors at the wafer scale with engineered layer numbers and interlayer twist angles. The as-produced structures feature pristine surfaces and interfaces, and wafer-scale uniformity — all of which are essential for application in next-generation electronic devices.
二维半导体具有极限的物理厚度，作为晶体管沟道材料可以有效抑制短沟道效应，是未来亚纳米技术节点集成电路制造中的关键候选材料。目前，最高质量的、可用于规模化器件集成的二维半导体材料是蓝宝石表面外延的二维半导体晶圆（参考本团队的前期工作：ACS Nano 2017, 11: 12001-12007；Nano Letter 2020, 20: 7193-7199；Advanced Materials 2024, 36: 2402855）。然而，在实际器件加工过程中，需要把这些外延的二维半导体转移到适用于器件加工的衬底之上。如何将二维半导体薄膜从其生长衬底高效转移至目标衬底，并保持其结构完整性和表/界面洁净度，是确保器件性能的关键环节，对未来实现二维半导体器件的规模化批量制造具有重要意义。
张广宇研究员带领团队，在全球首次实现原子极限厚度二维金属的大面积普适制备，填补了二维材料家族中长期缺失的金属成员空白。
二维材料团队
